Descripción del producto

Número de parte
FN2020A-10-06
Fabricante
Schaffner
categoria de producto
Filtros de línea eléctrica
Descripción
Power Line Filters 10A SAFETY FASTON GENERAL PURPOSE FLTR

Documentos y Medios

Hojas de datos
FN2020A-10-06

Atributos del producto

Filter Type :
1-Phase Single-Stage Filter
Mounting Style :
Chassis Mount
Series :
FN2020

Descripción

Power Line Filters 10A SAFETY FASTON GENERAL PURPOSE FLTR

Precio y Adquisiciones

Producto asociado

  • Xilinx
    CPLD - Complex Programmable Logic Devices XC2C256-6VQG100C
  • Xilinx
    CPLD - Complex Programmable Logic Devices XC2C256-6TQG144C
  • Xilinx
    CPLD - Complex Programmable Logic Devices 3.3V 36-mc CPLD
  • Xilinx
    CPLD - Complex Programmable Logic Devices XC2C32A-6VQG44C
  • Xilinx
    CPLD - Complex Programmable Logic Devices 3.3V 72-mc CPLD
  • Xilinx
    CPLD - Complex Programmable Logic Devices XC2C64A-7VQG44C
  • Xilinx
    CPLD - Complex Programmable Logic Devices 3.3V 72-mc CPLD
  • Xilinx
    CPLD - Complex Programmable Logic Devices XC2C64A-7VQG44I
  • STMicroelectronics
    Microprocessors - MPU MPU ARM926 Cortex 8-ch DMA 32KB Rom
  • STMicroelectronics
    Embedded - CPLDs (Complex Programmable Logic Devices)

Usted también podría estar interesado en

Parte Fabricante Existencias Descripción
CY7C1061GE30-10BV1XI Cypress Semiconductor 3,000 SRAM Async SRAMS
70T3799MS133BBG Renesas / IDT 3,000 SRAM 256K X 72 STD-PWR 2.5V DUAL PORT RAM
IS62WV5128BLL-55BLI ISSI 3,000 SRAM 4Mb, Low Power/Power Saver,Async,512K x 8,55ns,2.5v~3.6v,36 Ball mBGA (6x8 mm), RoHS
IS62WVS5128GBLL-45NLI-TR ISSI 3,000 SRAM 4Mb, Serial SRAM, 2.7V-3.6V, 45MHz, 8 pin SOIC 150mil, RoHS
GS864036GT-167I GSI Technology 3,000 SRAM 2.5 or 3.3V 2M x 36 72M
IS66WVE1M16EBLL-70BLI ISSI 3,000 SRAM 16Mb,Pseudo SRAM,Asynch/Page, 1M x 16,70ns,VDD 2.7V~3.6V, VDDQ 2.7V~3.6V,48 Ball BGA (6x8 mm), RoHS
IS66WV1M16EBLL-55BLI ISSI 3,000 SRAM 16Mb,Pseudo SRAM,Async,1M x 16,55ns,2.5v~3.6v,48 Ball BGA, RoHS
IS61WV10248EDBLL-10BLI ISSI 3,000 SRAM 8Mb,High-Speed/Low Power,Async with ECC,1Mb x 8,10ns,2.4V-3.6V,48 Ball mBGA (6x8 mm), RoHS
CY62137FV30LL-45BVXIT Cypress Semiconductor 3,000 SRAM 2Mb 3V 45ns 128K x 16 LP SRAM
71V424S10YGI8 Renesas / IDT 3,000 SRAM 512Kx8 ASYNCHRONOUS 3.3V CMOS SRAM
GS8322Z36AGD-200I GSI Technology 3,000 SRAM 2.5 or 3.3V 1M x 36 36M
CY7C1250KV18-400BZXC Cypress Semiconductor 3,000 SRAM 36MB (1Mx36) 1.8v 400MHz DDR II SRAM
IS61WV51216EDBLL-8BLI ISSI 3,000 SRAM 8Mb,High-Speed/Low Power,Async with ECC,512K x 16,8ns,2.4V-3.6V,48 Ball mBGA (6x8 mm), RoHS
47L16T-E/ST Microchip Technology 3,000 SRAM 16k, 3.0V EERAM EXT
23LC1024T-E/ST Microchip Technology 3,000 SRAM 1024K 2.5V SPI SERIAL SRAM SQI EXT