sales@szcinty.com
Descripción del producto
- Número de parte
- 896-052-559-803
- Fabricante
- EDAC
- categoria de producto
- Conectores de borde de tarjeta estándar
- Descripción
- Standard Card Edge Connectors High Temp Card Edge Connectors
Documentos y Medios
- Hojas de datos
- 896-052-559-803
Atributos del producto
- Board Thickness :
- 1.57 mm
- Contact Plating :
- Gold
- Mounting Angle :
- Right Angle
- Mounting Style :
- Panel Mount
- Number of Positions :
- 52 Position
- Pitch :
- 3.175 mm
- Product :
- Receptacles
Descripción
Standard Card Edge Connectors High Temp Card Edge Connectors
Precio y Adquisiciones
Producto asociado
Usted también podría estar interesado en
| Parte | Fabricante | Existencias | Descripción |
|---|---|---|---|
| STP80NF03L-04 | STMicroelectronics | 2,173 | MOSFET N-Ch 30 Volt 80 Amp |
| SI7164DP-T1-GE3 | Vishay Semiconductors | 6,000 | MOSFET 60V Vds 20V Vgs PowerPAK SO-8 |
| IRFS9N60APBF | Vishay Semiconductors | 3,573 | MOSFET 600V N-CH HEXFET D2PAK |
| NVMFS5C404NWFAFT1G | onsemi | 1,328 | MOSFET T6 40V HEFET |
| CSD18532Q5BT | Texas Instruments | 7,134 | MOSFET 60V, N-channel NexFET Pwr MOSFET |
| SI7658ADP-T1-GE3 | Vishay Semiconductors | 3,000 | MOSFET 30V Vds 20V Vgs PowerPAK SO-8 |
| IPB042N10N3 G | Infineon Technologies | 4,000 | MOSFET N-Ch 100V 100A D2PAK-2 OptiMOS 3 |
| SI7463DP-T1-GE3 | Vishay Semiconductors | 6,020 | MOSFET 40V 18.6A 5.4W 9.2mohm @ 10V |
| IPB042N10N3GATMA1 | Infineon Technologies | 4,000 | MOSFET N-Ch 100V 100A D2PAK-2 OptiMOS 3 |
| STL225N6F7AG | STMicroelectronics | 2,925 | MOSFET Automotive 60V N-Ch 12mOhm 120A F7 Power |
| FDMS5352 | onsemi / Fairchild | 4,235 | MOSFET 60V N-Channel PowerTrench |
| DN2625DK6-G | Microchip Technology | 875 | MOSFET N-CHANNEL DEPLETION MODE |
| SQM10250E_GE3 | Vishay / Siliconix | 3,762 | MOSFET 250V Vds 20V Vgs TO-263 |
| SI7942DP-T1-E3 | Vishay Semiconductors | 5,000 | MOSFET 100V Vds 20V Vgs PowerPAK SO-8 |
| SI7148DP-T1-E3 | Vishay Semiconductors | 5,513 | MOSFET 75V Vds 20V Vgs PowerPAK SO-8 |
