sales@szcinty.com
Descripción del producto
- Número de parte
- DIN-032CSB-PSL-HM
- Fabricante
- 3M Connectors
- categoria de producto
- Conectores DIN 41612
- Descripción
- DIN 41612 Connectors 32P VERTICAL SOCKET DIN 41612
Documentos y Medios
- Hojas de datos
- DIN-032CSB-PSL-HM
Atributos del producto
- Contact Material :
- Copper Alloy
- Contact Plating :
- Tin
- Mounting Angle :
- Vertical
- Number of Positions :
- 32 Position
- Number of Rows :
- 3 Row
- Pitch :
- 2.54 mm
- Product :
- Receptacles
- Series :
- DIN
- Termination Style :
- Press Fit
- Type :
- C
Descripción
DIN 41612 Connectors 32P VERTICAL SOCKET DIN 41612
Precio y Adquisiciones
Producto asociado
Usted también podría estar interesado en
| Parte | Fabricante | Existencias | Descripción |
|---|---|---|---|
| RN2967(TE85L,F) | Toshiba | 3,000 | Bipolar Transistors - Pre-Biased US6 PLN (LF) TRANSISTOR Pd 200mW F 1MHz |
| RN2103MFV,L3XHF(CT | Toshiba | 3,000 | Bipolar Transistors - Pre-Biased AUTO AEC-Q PNP Q1BSR=22kO, Q1BER=22kO, VCEO=-50V, IC=-0.1A (SOT-723) |
| RN1404,LXHF | Toshiba | 3,000 | Bipolar Transistors - Pre-Biased AUTO AEC-Q Single NPN Q1BSR=47kO, Q1BER=47kO, VCEO=50V, IC=0.1A (SOT-346) |
| RN2971(TE85L,F) | Toshiba | 3,000 | Bipolar Transistors - Pre-Biased US6 PLN (LF) TRANSISTOR Pd 200mW F 1MHz |
| RN2408,LXHF | Toshiba | 3,000 | Bipolar Transistors - Pre-Biased AUTO AEC-Q TR PNP Q1BSR=22kOhm, Q1BER=47kOhm, VCEO=-50V, IC=-0.1A (SOT-346) |
| RN1406,LXHF | Toshiba | 3,000 | Bipolar Transistors - Pre-Biased AUTO AEC-Q Single NPN Q1BSR=4.7kO, Q1BER=47kO, VCEO=50V, IC=0.1A (SOT-346) |
| RN1412,LXHF | Toshiba | 3,000 | Bipolar Transistors - Pre-Biased AUTO AEC-Q NPN Q1BSR=22kO, VCEO=50V, IC=0.1A (SOT-346) |
| RN1101MFV,L3XHF(CT | Toshiba | 3,000 | Bipolar Transistors - Pre-Biased AUTO AEC-Q NPN Q1BSR=4.7kO, Q1BER=4.7kO, VCEO=50V, IC=0.1A (SOT-723) |
| RN2413,LXHF | Toshiba | 3,000 | Bipolar Transistors - Pre-Biased AUTO AEC-Q Single PNP Q1BSR=47kO, VCEO=-50V, IC=-0.1A (SOT-346) |
| RN1413,LXHF | Toshiba | 3,000 | Bipolar Transistors - Pre-Biased AUTO AEC-Q NPN Q1BSR=47kO, VCEO=50V, IC=0.1A (SOT-346) |
| RN1968(TE85L,F) | Toshiba | 3,000 | Bipolar Transistors - Pre-Biased US6 TRANSISTOR Pd 50mW F 1Mhz (LF) |
| RN2406,LXHF | Toshiba | 3,000 | Bipolar Transistors - Pre-Biased AUTO AEC-Q TR PNP Q1BSR=4.7kOhm, Q1BER=47kOhm, VCEO=-50V, IC=-0.1A (SOT-346) |
| RN1405,LXHF | Toshiba | 3,000 | Bipolar Transistors - Pre-Biased AUTO AEC-Q Single NPN Q1BSR=2.2kO, Q1BER=47kO, VCEO=50V, IC=0.1A (SOT-346) |
| RN4990(TE85L,F) | Toshiba | 3,000 | Bipolar Transistors - Pre-Biased PNP BRT SOT-363 |
| RN4988(TE85L,F) | Toshiba | 3,000 | Bipolar Transistors - Pre-Biased PNP BRT SOT-363 |
