Descripción del producto

Número de parte
TPS-30L
Fabricante
Bussmann / Eaton
categoria de producto
Fusibles especiales
Descripción
Specialty Fuses 30A

Documentos y Medios

Hojas de datos
TPS-30L

Atributos del producto

Body Style :
Cartridge Blade Fuses
Current Rating :
30 A
Fuse Size / Group :
Telepower
Fuse Type :
Fast Blow
Indicator Style :
Without Indicator
Interrupt Rating :
10 kA
Mounting Style :
Through Hole
Packaging :
Bulk
Product :
Specialty Fuses
Series :
TPS
Termination Style :
Radial Blade Bend
Voltage Rating DC :
170 VDC

Descripción

Specialty Fuses 30A

Precio y Adquisiciones

Producto asociado

  • Xilinx
    CPLD - Complex Programmable Logic Devices XC2C256-6VQG100C
  • Xilinx
    CPLD - Complex Programmable Logic Devices XC2C256-6TQG144C
  • Xilinx
    CPLD - Complex Programmable Logic Devices 3.3V 36-mc CPLD
  • Xilinx
    CPLD - Complex Programmable Logic Devices XC2C32A-6VQG44C
  • Xilinx
    CPLD - Complex Programmable Logic Devices 3.3V 72-mc CPLD
  • Xilinx
    CPLD - Complex Programmable Logic Devices XC2C64A-7VQG44C
  • Xilinx
    CPLD - Complex Programmable Logic Devices 3.3V 72-mc CPLD
  • Xilinx
    CPLD - Complex Programmable Logic Devices XC2C64A-7VQG44I
  • STMicroelectronics
    Microprocessors - MPU MPU ARM926 Cortex 8-ch DMA 32KB Rom
  • STMicroelectronics
    Embedded - CPLDs (Complex Programmable Logic Devices)

Usted también podría estar interesado en

Parte Fabricante Existencias Descripción
RN2401,LXHF Toshiba 3,000 Bipolar Transistors - Pre-Biased AUTO AEC-Q Single PNP Q1BSR=4.7kO, Q1BER=4.7kO, VCEO=-50V, IC=-0.1A (SOT-346)
DTA144TM3T5G onsemi 3,000 Bipolar Transistors - Pre-Biased 100mA 50V BRT PNP
RN2965(TE85L,F) Toshiba 3,000 Bipolar Transistors - Pre-Biased US6 PLN (LF) TRANSISTOR Pd 200mW F 1MHz
RN2104MFV,L3XHF(CT Toshiba 3,000 Bipolar Transistors - Pre-Biased AUTO AEC-Q Single PNP Q1BSR=47kO, Q1BER=47kO, VCEO=-50V, IC=-0.1A (SOT-723)
RN2407,LXHF Toshiba 3,000 Bipolar Transistors - Pre-Biased AUTO AEC-Q PNP Q1BSR=10kO, Q1BER=47kO, VCEO=-50V, IC=-0.1A (SOT-346)
DTA144TMT2L ROHM Semiconductor 3,000 Bipolar Transistors - Pre-Biased PNP 50V 100MA
RN2105MFV,L3XHF(CT Toshiba 3,000 Bipolar Transistors - Pre-Biased AUTO AEC-Q PNP Q1BSR=2.2kO, Q1BER=47kO, VCEO=-50V, IC=-0.1A (SOT-723)
RN1411,LXHF Toshiba 3,000 Bipolar Transistors - Pre-Biased AUTO AEC-Q NPN Q1BSR=10kO, VCEO=50V, IC=0.1A (SOT-346)
RN2402,LXHF Toshiba 3,000 Bipolar Transistors - Pre-Biased AUTO AEC-Q Single PNP Q1BSR=10kO, Q1BER=10kO, VCEO=-50V, IC=-0.1A (SOT-346)
DTA115TM3T5G onsemi 3,000 Bipolar Transistors - Pre-Biased PNP DIGITAL TRANSISTOR
RN1416,LXHF Toshiba 3,000 Bipolar Transistors - Pre-Biased AUTO AEC-Q Single NPN Q1BSR=4.7kO, Q1BER=10kO, VCEO=50V, IC=0.1A (SOT-346)
RN2403,LXHF Toshiba 3,000 Bipolar Transistors - Pre-Biased AUTO AEC-Q Single PNP Q1BSR=22kO, Q1BER=22kO, VCEO=-50V, IC=-0.1A (SOT-346)
RN1408,LXHF Toshiba 3,000 Bipolar Transistors - Pre-Biased AUTO AEC-Q Single NPN Q1BSR=22kO, Q1BER=47kO, VCEO=50V, IC=0.1A (SOT-346)
RN1963(TE85L,F) Toshiba 3,000 Bipolar Transistors - Pre-Biased US6 PLN (LF) TRANSISTOR Pd=200mW F=250MHz
RN1102MFV,L3XHF(CT Toshiba 3,000 Bipolar Transistors - Pre-Biased AUTO AEC-Q Single NPN Q1BSR=10kO, Q1BER=10kO, VCEO=50V, IC=0.1A (SOT-723)