Produktübersicht

Artikelnummer
BFU530XAR
Hersteller
NXP Semiconductors
Produktkategorie
HF-Bipolartransistoren
Beschreibung
RF Bipolar Transistors NPN wideband silicon RF transistor

Dokumente & Medien

Datenblätter
BFU530XAR

Produkteigenschaften

Collector- Emitter Voltage VCEO Max :
16 V
Configuration :
Single
Continuous Collector Current :
10 mA
DC Collector/Base Gain hfe Min :
60
Emitter- Base Voltage VEBO :
2 V
Maximum Operating Temperature :
+ 150 C
Minimum Operating Temperature :
- 40 C
Mounting Style :
SMD/SMT
Operating Frequency :
900 MHz
Package / Case :
SOT143B-4
Packaging :
Cut Tape, Reel
Technology :
SI
Transistor Polarity :
NPN
Transistor Type :
Bipolar Wideband

Beschreibung

RF Bipolar Transistors NPN wideband silicon RF transistor

Preis & Beschaffung

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