Produktübersicht

Artikelnummer
C1206C103M5UACTM
Hersteller
KEMET Electronics
Produktkategorie
Mehrschichtige Keramikkondensatoren MLCC - SMD/SMT
Beschreibung
Multilayer Ceramic Capacitors MLCC - SMD/SMT 50V 0.01uF Z5U 1206 20%

Dokumente & Medien

Datenblätter
C1206C103M5UACTM

Produkteigenschaften

Capacitance :
0.01 uF
Case Code - in :
1206
Case Code - mm :
3216
Dielectric :
Z5U
Height :
0.78 mm
Maximum Operating Temperature :
+ 85 C
Minimum Operating Temperature :
- 10 C
Packaging :
Cut Tape, MouseReel, Reel
Product :
General Type MLCCs
Series :
SMD Comm Z5U
Termination :
Standard
Termination Style :
SMD/SMT
Tolerance :
20 %
Voltage Rating DC :
50 VDC

Beschreibung

Multilayer Ceramic Capacitors MLCC - SMD/SMT 50V 0.01uF Z5U 1206 20%

Preis & Beschaffung

Zugehöriges Produkt

  • Xilinx
    CPLD - Complex Programmable Logic Devices XC2C256-6VQG100C
  • Xilinx
    CPLD - Complex Programmable Logic Devices XC2C256-6TQG144C
  • Xilinx
    CPLD - Complex Programmable Logic Devices 3.3V 36-mc CPLD
  • Xilinx
    CPLD - Complex Programmable Logic Devices XC2C32A-6VQG44C
  • Xilinx
    CPLD - Complex Programmable Logic Devices 3.3V 72-mc CPLD
  • Xilinx
    CPLD - Complex Programmable Logic Devices XC2C64A-7VQG44C
  • Xilinx
    CPLD - Complex Programmable Logic Devices 3.3V 72-mc CPLD
  • Xilinx
    CPLD - Complex Programmable Logic Devices XC2C64A-7VQG44I
  • STMicroelectronics
    Microprocessors - MPU MPU ARM926 Cortex 8-ch DMA 32KB Rom
  • STMicroelectronics
    Embedded - CPLDs (Complex Programmable Logic Devices)

Das könnte Sie auch interessieren

Teil Hersteller Lager Beschreibung
AGP10K Bourns 3,000 Diodes - General Purpose, Power, Switching DIO REC VRRM 800V 1A DO41 AECQ
AGP10M Bourns 3,000 Diodes - General Purpose, Power, Switching DIO REC VRRM 1000V 1A DO41 AECQ
VS-305UA250P4 Vishay Semiconductors 3,000 Diodes - General Purpose, Power, Switching U-HI PWR DIODE DO-9
RFN5BGE2STL ROHM Semiconductor 3,000 Diodes - General Purpose, Power, Switching Super Fast Recovery Diode. RFN5BGE2S is the silicon epitaxial planar type Fast Recovery Diode.
RGL34BHE3/83 Vishay General Semiconductor 3,000 Diodes - General Purpose, Power, Switching 100 Volt 0.5A 150ns 10 Amp IFSM
RGL34JHE3/83 Vishay General Semiconductor 3,000 Diodes - General Purpose, Power, Switching 600 Volt 0.5A 250ns 10 Amp IFSM
RF501BGE2STL ROHM Semiconductor 3,000 Diodes - General Purpose, Power, Switching Super Fast Recovery Diode. RF501BGE2S is the silicon epitaxial planar type Fast Recovery Diode.
QH12BZ600 Power Integrations 3,000 Diodes - General Purpose, Power, Switching Super-Low Qrr. 600V, 12A, Rectifier
VS-301URA80 Vishay Semiconductors 3,000 Diodes - General Purpose, Power, Switching 300 Amp 800 Volt 520 Amp IF(RMS)
VS-301URA120 Vishay Semiconductors 3,000 Diodes - General Purpose, Power, Switching 300 Amp 1200 Volt 520 Amp IF(RMS)
VS-301URA160 Vishay Semiconductors 3,000 Diodes - General Purpose, Power, Switching 300 Amp 1600 Volt 520 Amp IF(RMS)
VS-301URA180 Vishay Semiconductors 3,000 Diodes - General Purpose, Power, Switching 300 Amp 1800 Volt 520 Amp IF(RMS)
RFN5BGE6STL ROHM Semiconductor 3,000 Diodes - General Purpose, Power, Switching Super Fast Recovery Diode. RFN5BGE6S is the silicon epitaxial planar type Fast Recovery Diode.
VS-301URA200 Vishay Semiconductors 3,000 Diodes - General Purpose, Power, Switching 300 Amp 2000 Volt 520 Amp IF(RMS)
VS-301U200 Vishay Semiconductors 3,000 Diodes - General Purpose, Power, Switching 2000 Volt 300 Amp