Produktübersicht
- Artikelnummer
- RN732ETTD1930F50
- Hersteller
- KOA Speer
- Produktkategorie
- Dünnschichtwiderstände
- Beschreibung
- Thin Film Resistors - SMD 1210 193 Ohms 1% 50PPM
Dokumente & Medien
- Datenblätter
- RN732ETTD1930F50
Produkteigenschaften
- Case Code - in :
- 1210
- Case Code - mm :
- 3225
- Maximum Operating Temperature :
- + 155 C
- Minimum Operating Temperature :
- - 55 C
- Packaging :
- Reel
- Power Rating :
- 250 mW (1/4 W)
- Resistance :
- 193 Ohms
- Series :
- RN73
- Temperature Coefficient :
- 50 PPM / C
- Tolerance :
- 1 %
- Voltage Rating :
- 200 V
Beschreibung
Thin Film Resistors - SMD 1210 193 Ohms 1% 50PPM
Preis & Beschaffung
Zugehöriges Produkt
Das könnte Sie auch interessieren
Teil | Hersteller | Lager | Beschreibung |
---|---|---|---|
AFT27S012NT1 | NXP Semiconductors | 3,000 | RF MOSFET Transistors Airfast RF Power LDMOS Transistor, 728-2700 MHz, 1.26 W AVG., 28 V |
A3T18H400W23SR6 | NXP Semiconductors | 3,000 | RF MOSFET Transistors Airfast RF Power LDMOS Transistor, 1805-1880 MHz, 71 W Avg., 28 V |
A3T21H455W23SR6 | NXP Semiconductors | 3,000 | RF MOSFET Transistors Airfast RF Power LDMOS Transistor, 2110-2200 MHz, 87 W Avg., 30 V |
SD2932BW | STMicroelectronics | 3,000 | RF MOSFET Transistors HF/VHF/UHF RF N-Ch 300W 15dB 175MHz |
MRF6V12250HSR5 | NXP Semiconductors | 3,000 | RF MOSFET Transistors VHV6 250W 50V NI780HS |
RF3L05400CB4 | STMicroelectronics | 3,000 | RF MOSFET Transistors PTD NEW MAT & PWR SOLUTION |
RF3L05200CB4 | STMicroelectronics | 3,000 | RF MOSFET Transistors PTD NEW MAT & PWR SOLUTION |
MMRF1008GHR5 | NXP Semiconductors | 3,000 | RF MOSFET Transistors Pulse Lateral N-Channel RF Power MOSFET, 960-1215 MHz, 275 W, 50 V |
STAC1214-350 | STMicroelectronics | 3,000 | RF MOSFET Transistors 350 W, 50 V, 1200 to 1400 MHz RF power LDMOS transistor |
STAC1011-500 | STMicroelectronics | 3,000 | RF MOSFET Transistors 500 W, 50 V, 700 to 1200 MHz RF power LDMOS transistor |
PTFC210202FC-V1-R250 | Wolfspeed / Cree | 3,000 | RF MOSFET Transistors RF LDMOS FET |
A3T19H455W23SR6 | NXP Semiconductors | 3,000 | RF MOSFET Transistors Airfast RF Power LDMOS Transistor, 1930-1990 MHz, 81 W Avg., 30 V |
A3T18H455W23SR6 | NXP Semiconductors | 3,000 | RF MOSFET Transistors Airfast RF Power LDMOS Transistor, 1805-1880 MHz, 87 W Avg., 30 V |
A2V07H525-04NR6 | NXP Semiconductors | 3,000 | RF MOSFET Transistors Airfast RF Power LDMOS Transistor, 595-851 MHz, 120 W Avg., 48 V |
PXAC200902FC-V1-R2 | Wolfspeed / Cree | 3,000 | RF MOSFET Transistors RF LDMOS FET |