Produktübersicht
- Artikelnummer
- RN73R2ETTD1130F100
- Hersteller
- KOA Speer
- Produktkategorie
- Dünnschichtwiderstände
- Beschreibung
- Thin Film Resistors - SMD 1% 1210 .25W AEC-Q200
Dokumente & Medien
- Datenblätter
- RN73R2ETTD1130F100
Produkteigenschaften
- Case Code - in :
- 1210
- Case Code - mm :
- 3225
- Maximum Operating Temperature :
- + 155 C
- Minimum Operating Temperature :
- - 55 C
- Packaging :
- Reel
- Power Rating :
- 250 mW (1/4 W)
- Qualification :
- AEC-Q200
- Resistance :
- 113 Ohms
- Series :
- RN73R-2E
- Temperature Coefficient :
- 100 PPM / C
- Tolerance :
- 1 %
- Voltage Rating :
- 200 V
Beschreibung
Thin Film Resistors - SMD 1% 1210 .25W AEC-Q200
Preis & Beschaffung
Zugehöriges Produkt
Das könnte Sie auch interessieren
Teil | Hersteller | Lager | Beschreibung |
---|---|---|---|
IPU95R450P7AKMA1 | Infineon Technologies | 1,248 | MOSFET LOW POWER_NEW |
SIZF920DT-T1-GE3 | Vishay / Siliconix | 11,744 | MOSFET Dual 30V Vds PowerPAIR 6x5F |
DMTH8003SPS-13 | Diodes Incorporated | 2,130 | MOSFET MOSFET BVDSS: 61V-100V |
IPL60R225CFD7AUMA1 | Infineon Technologies | 2,980 | MOSFET LOW POWER_NEW |
STF36N60M6 | STMicroelectronics | 922 | MOSFET PTD HIGH VOLTAGE |
TPH2R104PL,LQ | Toshiba | 4,811 | MOSFET POWER MOSFET TRANSISTOR |
NTMTS0D6N04CTXG | onsemi | 2,216 | MOSFET T6 40V SG PQFN8*8 EXPANSION |
IPB60R125CFD7ATMA1 | Infineon Technologies | 1,377 | MOSFET HIGH POWER_NEW |
IAUS165N08S5N029ATMA1 | Infineon Technologies | 1,611 | MOSFET MOSFET_(75V 120V( |
FDPF4D5N10C | onsemi | 923 | MOSFET FET 100V 128A 4.5 mOhm |
STP45N60DM6 | STMicroelectronics | 973 | MOSFET PTD HIGH VOLTAGE |
STWA48N60DM2 | STMicroelectronics | 634 | MOSFET PTD HIGH VOLTAGE |
EFC4K105NUZTDG | onsemi | 4,889 | MOSFET Dual NCH 22V 25A |
SIZF914DT-T1-GE3 | Vishay / Siliconix | 5,567 | MOSFET 25V Vds 20V Vgs PowerPAIR 6 x 5F |
IPA60R125CFD7XKSA1 | Infineon Technologies | 708 | MOSFET HIGH POWER_NEW |