Datenblätter

TPN2R805PL,L1Q

Channel Mode :

Enhancement

Id - Continuous Drain Current :

139 A

Maximum Operating Temperature :

+ 175 C

Mounting Style :

SMD/SMT

Number of Channels :

1 Channel

Package / Case :

TSON-Advance-8

Packaging :

Reel

Pd - Power Dissipation :

104 W

Qg - Gate Charge :

39 nC

Rds On - Drain-Source Resistance :

2.2 mOhms

Technology :

SI

Tradename :

U-MOSIX-H

Transistor Polarity :

N-Channel

Vds - Drain-Source Breakdown Voltage :

45 V

Vgs - Gate-Source Voltage :

- 20 V, + 20 V

Vgs th - Gate-Source Threshold Voltage :

1.4 V