Produktübersicht

Artikelnummer
R8002KND3TL1
Hersteller
ROHM Semiconductor
Produktkategorie
MOSFET
Beschreibung
MOSFET

Dokumente & Medien

Datenblätter
R8002KND3TL1

Produkteigenschaften

Channel Mode :
Enhancement
Id - Continuous Drain Current :
1.6 A
Maximum Operating Temperature :
+ 150 C
Minimum Operating Temperature :
- 55 C
Mounting Style :
SMD/SMT
Number of Channels :
1 Channel
Package / Case :
TO-252-3
Packaging :
Reel
Pd - Power Dissipation :
30 W
Qg - Gate Charge :
7.5 nC
Rds On - Drain-Source Resistance :
4.2 Ohms
Technology :
SI
Transistor Polarity :
N-Channel
Vds - Drain-Source Breakdown Voltage :
800 V
Vgs - Gate-Source Voltage :
20 V, 30 V
Vgs th - Gate-Source Threshold Voltage :
4.5 V

Beschreibung

MOSFET

Preis & Beschaffung

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