Datenblätter

SQJA36EP-T2_GE3

Channel Mode :

Enhancement

Id - Continuous Drain Current :

350 A

Maximum Operating Temperature :

+ 175 C

Minimum Operating Temperature :

- 55 C

Mounting Style :

SMD/SMT

Number of Channels :

1 Channel

Package / Case :

PowerPAK-SO-8L-4

Packaging :

Reel

Pd - Power Dissipation :

500 W

Qg - Gate Charge :

86 nC

Qualification :

AEC-Q101

Rds On - Drain-Source Resistance :

1.24 MOhms

Technology :

SI

Tradename :

TrenchFET

Transistor Polarity :

N-Channel

Vds - Drain-Source Breakdown Voltage :

40 V

Vgs - Gate-Source Voltage :

- 20 V, + 20 V

Vgs th - Gate-Source Threshold Voltage :

3.5 V