sales@szcinty.com
Produktübersicht
- Artikelnummer
- SI5441BDC-T1-GE3
- Hersteller
- Vishay Semiconductors
- Produktkategorie
- MOSFET
- Beschreibung
- MOSFET 20V 6.1A 2.5W 45mohm @ 4.5V
Dokumente & Medien
- Datenblätter
- SI5441BDC-T1-GE3
Produkteigenschaften
- Channel Mode :
- Enhancement
- Id - Continuous Drain Current :
- 6.1 A
- Maximum Operating Temperature :
- + 150 C
- Minimum Operating Temperature :
- - 55 C
- Mounting Style :
- SMD/SMT
- Number of Channels :
- 1 Channel
- Package / Case :
- ChipFET-8
- Packaging :
- Cut Tape, MouseReel, Reel
- Pd - Power Dissipation :
- 2.5 W
- Qg - Gate Charge :
- 22 nC
- Rds On - Drain-Source Resistance :
- 80 mOhms
- Technology :
- SI
- Tradename :
- TrenchFET
- Transistor Polarity :
- P-Channel
- Vds - Drain-Source Breakdown Voltage :
- 20 V
- Vgs - Gate-Source Voltage :
- - 12 V, + 12 V
- Vgs th - Gate-Source Threshold Voltage :
- 1.4 V
Beschreibung
MOSFET 20V 6.1A 2.5W 45mohm @ 4.5V
Preis & Beschaffung
Zugehöriges Produkt
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