Datenblätter

SIHB6N80E-GE3

Channel Mode :

Enhancement

Id - Continuous Drain Current :

5.4 A

Maximum Operating Temperature :

+ 150 C

Minimum Operating Temperature :

- 55 C

Mounting Style :

SMD/SMT

Number of Channels :

1 Channel

Package / Case :

TO-263-3

Pd - Power Dissipation :

78 W

Qg - Gate Charge :

22 nC

Rds On - Drain-Source Resistance :

820 mOhms

Technology :

SI

Transistor Polarity :

N-Channel

Vds - Drain-Source Breakdown Voltage :

800 V

Vgs - Gate-Source Voltage :

- 30 V, + 30 V

Vgs th - Gate-Source Threshold Voltage :

2 V