Produktübersicht

Artikelnummer
FDMS4D4N08C
Hersteller
onsemi / Fairchild
Produktkategorie
MOSFET
Beschreibung
MOSFET PTNG 80/20V Nch Power Trench MOSFET

Dokumente & Medien

Datenblätter
FDMS4D4N08C

Produkteigenschaften

Channel Mode :
Enhancement
Id - Continuous Drain Current :
123 A
Maximum Operating Temperature :
+ 150 C
Minimum Operating Temperature :
- 55 C
Mounting Style :
SMD/SMT
Number of Channels :
1 Channel
Package / Case :
Power-56-8
Packaging :
Cut Tape, Reel
Pd - Power Dissipation :
125 W
Qg - Gate Charge :
56 nC
Rds On - Drain-Source Resistance :
3.7 MOhms
Technology :
SI
Transistor Polarity :
N-Channel
Vds - Drain-Source Breakdown Voltage :
80 V
Vgs - Gate-Source Voltage :
- 20 V, + 20 V
Vgs th - Gate-Source Threshold Voltage :
2 V

Beschreibung

MOSFET PTNG 80/20V Nch Power Trench MOSFET

Preis & Beschaffung

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