Produktübersicht
- Artikelnummer
- IPG20N10S4L22AATMA1
- Hersteller
- Infineon Technologies
- Produktkategorie
- MOSFET
- Beschreibung
- MOSFET MOSFET_(75V 120V(
Dokumente & Medien
- Datenblätter
- IPG20N10S4L22AATMA1
Produkteigenschaften
- Channel Mode :
- Enhancement
- Id - Continuous Drain Current :
- 20 A
- Maximum Operating Temperature :
- + 175 C
- Minimum Operating Temperature :
- - 55 C
- Mounting Style :
- SMD/SMT
- Number of Channels :
- 2 Channel
- Package / Case :
- TDSON-8
- Packaging :
- Cut Tape, MouseReel, Reel
- Pd - Power Dissipation :
- 60 W
- Qg - Gate Charge :
- 27 nC
- Qualification :
- AEC-Q101
- Rds On - Drain-Source Resistance :
- 20 mOhms, 20 mOhms
- Technology :
- SI
- Transistor Polarity :
- N-Channel
- Vds - Drain-Source Breakdown Voltage :
- 100 V
- Vgs - Gate-Source Voltage :
- - 16 V, + 16 V
- Vgs th - Gate-Source Threshold Voltage :
- 1.1 V
Beschreibung
MOSFET MOSFET_(75V 120V(
Preis & Beschaffung
Zugehöriges Produkt
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