Produktübersicht

Artikelnummer
IPG20N10S4L22AATMA1
Hersteller
Infineon Technologies
Produktkategorie
MOSFET
Beschreibung
MOSFET MOSFET_(75V 120V(

Dokumente & Medien

Datenblätter
IPG20N10S4L22AATMA1

Produkteigenschaften

Channel Mode :
Enhancement
Id - Continuous Drain Current :
20 A
Maximum Operating Temperature :
+ 175 C
Minimum Operating Temperature :
- 55 C
Mounting Style :
SMD/SMT
Number of Channels :
2 Channel
Package / Case :
TDSON-8
Packaging :
Cut Tape, MouseReel, Reel
Pd - Power Dissipation :
60 W
Qg - Gate Charge :
27 nC
Qualification :
AEC-Q101
Rds On - Drain-Source Resistance :
20 mOhms, 20 mOhms
Technology :
SI
Transistor Polarity :
N-Channel
Vds - Drain-Source Breakdown Voltage :
100 V
Vgs - Gate-Source Voltage :
- 16 V, + 16 V
Vgs th - Gate-Source Threshold Voltage :
1.1 V

Beschreibung

MOSFET MOSFET_(75V 120V(

Preis & Beschaffung

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