Datenblätter

UF3C170400K3S

Channel Mode :

Enhancement

Id - Continuous Drain Current :

7.6 A

Maximum Operating Temperature :

+ 175 C

Minimum Operating Temperature :

- 55 C

Mounting Style :

Through Hole

Number of Channels :

1 Channel

Package / Case :

TO-247-3

Packaging :

Tube

Pd - Power Dissipation :

100 W

Qg - Gate Charge :

27.5 nC

Rds On - Drain-Source Resistance :

1.07 Ohms

Technology :

SiC

Tradename :

SiC FET

Transistor Polarity :

N-Channel

Vds - Drain-Source Breakdown Voltage :

1.7 kV

Vgs - Gate-Source Voltage :

- 25 V, + 25 V

Vgs th - Gate-Source Threshold Voltage :

6 V