Dokumente & Medien
- Datenblätter
- BUK7K5R1-30E,115
Produkteigenschaften
- Channel Mode :
- Enhancement
- Id - Continuous Drain Current :
- 40 A
- Maximum Operating Temperature :
- + 175 C
- Minimum Operating Temperature :
- - 55 C
- Mounting Style :
- SMD/SMT
- Number of Channels :
- 2 Channel
- Package / Case :
- LFPAK-56D-8
- Packaging :
- Cut Tape, MouseReel, Reel
- Pd - Power Dissipation :
- 68 W
- Qg - Gate Charge :
- 31.1 nC
- Qualification :
- AEC-Q101
- Rds On - Drain-Source Resistance :
- 4.34 mOhms
- Technology :
- SI
- Transistor Polarity :
- N-Channel
- Vds - Drain-Source Breakdown Voltage :
- 30 V
- Vgs - Gate-Source Voltage :
- - 20 V, + 20 V
- Vgs th - Gate-Source Threshold Voltage :
- 3 V
Beschreibung
MOSFET Dual N-channel 30 V 5.1 mo FET
Preis & Beschaffung
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