Datenblätter

SI3900DV-T1-E3

Channel Mode :

Enhancement

Id - Continuous Drain Current :

2.4 A

Maximum Operating Temperature :

+ 150 C

Minimum Operating Temperature :

- 55 C

Mounting Style :

SMD/SMT

Number of Channels :

2 Channel

Package / Case :

TSOP-6

Packaging :

Cut Tape, MouseReel, Reel

Pd - Power Dissipation :

1.15 W

Qg - Gate Charge :

4 NC

Rds On - Drain-Source Resistance :

125 mOhms

Technology :

SI

Tradename :

TrenchFET

Transistor Polarity :

P-Channel

Vds - Drain-Source Breakdown Voltage :

20 V

Vgs - Gate-Source Voltage :

- 12 V, + 12 V

Vgs th - Gate-Source Threshold Voltage :

600 mV