Produktübersicht

Artikelnummer
DMN4800LSS-13
Hersteller
Diodes Incorporated
Produktkategorie
MOSFET
Beschreibung
MOSFET N-CHAN ENHNCMNT MODE

Dokumente & Medien

Datenblätter
DMN4800LSS-13

Produkteigenschaften

Channel Mode :
Enhancement
Id - Continuous Drain Current :
8.6 A
Maximum Operating Temperature :
+ 150 C
Minimum Operating Temperature :
- 55 C
Mounting Style :
SMD/SMT
Number of Channels :
1 Channel
Package / Case :
SO-8
Packaging :
Cut Tape, MouseReel, Reel
Pd - Power Dissipation :
1.46 W
Qg - Gate Charge :
8.7 nC
Rds On - Drain-Source Resistance :
20 mOhms
Technology :
SI
Transistor Polarity :
N-Channel
Vds - Drain-Source Breakdown Voltage :
30 V
Vgs - Gate-Source Voltage :
- 20 V, + 20 V
Vgs th - Gate-Source Threshold Voltage :
800 mV

Beschreibung

MOSFET N-CHAN ENHNCMNT MODE

Preis & Beschaffung

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