Produktübersicht

Artikelnummer
IPB011N04L G
Hersteller
Infineon Technologies
Produktkategorie
MOSFET
Beschreibung
MOSFET N-Ch 40V 180A D2PAK-6 OptiMOS 3

Dokumente & Medien

Datenblätter
IPB011N04L G

Produkteigenschaften

Channel Mode :
Enhancement
Id - Continuous Drain Current :
180 A
Maximum Operating Temperature :
+ 175 C
Minimum Operating Temperature :
- 55 C
Mounting Style :
SMD/SMT
Number of Channels :
1 Channel
Package / Case :
TO-263-7
Packaging :
Cut Tape, MouseReel, Reel
Pd - Power Dissipation :
250 W
Qg - Gate Charge :
346 nC
Rds On - Drain-Source Resistance :
800 uOhms
Technology :
SI
Tradename :
OptiMOS
Transistor Polarity :
N-Channel
Vds - Drain-Source Breakdown Voltage :
40 V
Vgs - Gate-Source Voltage :
- 20 V, + 20 V
Vgs th - Gate-Source Threshold Voltage :
1.2 V

Beschreibung

MOSFET N-Ch 40V 180A D2PAK-6 OptiMOS 3

Preis & Beschaffung

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