Produktübersicht
- Artikelnummer
- IPB011N04L G
- Hersteller
- Infineon Technologies
- Produktkategorie
- MOSFET
- Beschreibung
- MOSFET N-Ch 40V 180A D2PAK-6 OptiMOS 3
Dokumente & Medien
- Datenblätter
- IPB011N04L G
Produkteigenschaften
- Channel Mode :
- Enhancement
- Id - Continuous Drain Current :
- 180 A
- Maximum Operating Temperature :
- + 175 C
- Minimum Operating Temperature :
- - 55 C
- Mounting Style :
- SMD/SMT
- Number of Channels :
- 1 Channel
- Package / Case :
- TO-263-7
- Packaging :
- Cut Tape, MouseReel, Reel
- Pd - Power Dissipation :
- 250 W
- Qg - Gate Charge :
- 346 nC
- Rds On - Drain-Source Resistance :
- 800 uOhms
- Technology :
- SI
- Tradename :
- OptiMOS
- Transistor Polarity :
- N-Channel
- Vds - Drain-Source Breakdown Voltage :
- 40 V
- Vgs - Gate-Source Voltage :
- - 20 V, + 20 V
- Vgs th - Gate-Source Threshold Voltage :
- 1.2 V
Beschreibung
MOSFET N-Ch 40V 180A D2PAK-6 OptiMOS 3
Preis & Beschaffung
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