Datenblätter

C3M0280090J

Channel Mode :

Enhancement

Id - Continuous Drain Current :

11 A

Maximum Operating Temperature :

+ 150 C

Minimum Operating Temperature :

- 55 C

Mounting Style :

SMD/SMT

Number of Channels :

1 Channel

Package / Case :

TO-263-7

Packaging :

Tube

Pd - Power Dissipation :

50 W

Qg - Gate Charge :

9.5 nC

Rds On - Drain-Source Resistance :

385 mOhms

Technology :

SiC

Transistor Polarity :

N-Channel

Vds - Drain-Source Breakdown Voltage :

900 V

Vgs - Gate-Source Voltage :

- 8 V, + 18 V

Vgs th - Gate-Source Threshold Voltage :

1.8 V