sales@szcinty.com
Produktübersicht
- Artikelnummer
- DMN10H120SE-13
- Hersteller
- Diodes Incorporated
- Produktkategorie
- MOSFET
- Beschreibung
- MOSFET 100V N-Ch Enh FET 20Vgss 549pF 10nC
Dokumente & Medien
- Datenblätter
- DMN10H120SE-13
Produkteigenschaften
- Channel Mode :
- Enhancement
- Id - Continuous Drain Current :
- 3.6 A
- Maximum Operating Temperature :
- + 150 C
- Minimum Operating Temperature :
- - 55 C
- Mounting Style :
- SMD/SMT
- Number of Channels :
- 1 Channel
- Package / Case :
- SOT-223-4
- Packaging :
- Cut Tape, MouseReel, Reel
- Pd - Power Dissipation :
- 2.1 W
- Qg - Gate Charge :
- 10 nC
- Rds On - Drain-Source Resistance :
- 110 mOhms
- Technology :
- SI
- Transistor Polarity :
- N-Channel
- Vds - Drain-Source Breakdown Voltage :
- 100 V
- Vgs - Gate-Source Voltage :
- - 20 V, + 20 V
- Vgs th - Gate-Source Threshold Voltage :
- 1.5 V
Beschreibung
MOSFET 100V N-Ch Enh FET 20Vgss 549pF 10nC
Preis & Beschaffung
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