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Produktübersicht
- Artikelnummer
- CSD19538Q2
- Hersteller
- Texas Instruments
- Produktkategorie
- MOSFET
- Beschreibung
- MOSFET 100-V, N channel NexFET power MOSFET, single SON 2 mm x 2 mm, 59 mOhm 6-WSON -55 to 150
Dokumente & Medien
- Datenblätter
- CSD19538Q2
Produkteigenschaften
- Channel Mode :
- Enhancement
- Id - Continuous Drain Current :
- 14.4 A
- Maximum Operating Temperature :
- + 150 C
- Minimum Operating Temperature :
- - 55 C
- Mounting Style :
- SMD/SMT
- Number of Channels :
- 1 Channel
- Package / Case :
- WSON-FET-6
- Packaging :
- Cut Tape, MouseReel, Reel
- Pd - Power Dissipation :
- 20.2 W
- Qg - Gate Charge :
- 5.6 nC
- Rds On - Drain-Source Resistance :
- 59 mOhms
- Technology :
- SI
- Tradename :
- NexFET
- Transistor Polarity :
- N-Channel
- Vds - Drain-Source Breakdown Voltage :
- 100 V
- Vgs - Gate-Source Voltage :
- - 20 V, + 20 V
- Vgs th - Gate-Source Threshold Voltage :
- 2.8 V
Beschreibung
MOSFET 100-V, N channel NexFET power MOSFET, single SON 2 mm x 2 mm, 59 mOhm 6-WSON -55 to 150
Preis & Beschaffung
Zugehöriges Produkt
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