Produktübersicht

Artikelnummer
SIA445EDJ-T1-GE3
Hersteller
Vishay Semiconductors
Produktkategorie
MOSFET
Beschreibung
MOSFET -20V Vds 12V Vgs PowerPAK SC-70

Dokumente & Medien

Datenblätter
SIA445EDJ-T1-GE3

Produkteigenschaften

Channel Mode :
Enhancement
Id - Continuous Drain Current :
12 A
Maximum Operating Temperature :
+ 150 C
Minimum Operating Temperature :
- 55 C
Mounting Style :
SMD/SMT
Number of Channels :
1 Channel
Package / Case :
SC-70-6
Packaging :
Cut Tape, MouseReel, Reel
Pd - Power Dissipation :
19 W
Qg - Gate Charge :
48 nC
Rds On - Drain-Source Resistance :
16.5 mOhms
Technology :
SI
Tradename :
TrenchFET, PowerPAK
Transistor Polarity :
P-Channel
Vds - Drain-Source Breakdown Voltage :
20 V
Vgs - Gate-Source Voltage :
- 12 V, + 12 V
Vgs th - Gate-Source Threshold Voltage :
1.2 V

Beschreibung

MOSFET -20V Vds 12V Vgs PowerPAK SC-70

Preis & Beschaffung

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