Produktübersicht

Artikelnummer
SI4062DY-T1-GE3
Hersteller
Vishay / Siliconix
Produktkategorie
MOSFET
Beschreibung
MOSFET 60V Vds 20V Vgs SO-8

Dokumente & Medien

Datenblätter
SI4062DY-T1-GE3

Produkteigenschaften

Channel Mode :
Enhancement
Id - Continuous Drain Current :
32.1 A
Maximum Operating Temperature :
+ 150 C
Minimum Operating Temperature :
- 55 C
Mounting Style :
SMD/SMT
Number of Channels :
1 Channel
Package / Case :
SO-8
Packaging :
Cut Tape, MouseReel, Reel
Pd - Power Dissipation :
7.8 W
Qg - Gate Charge :
40 nC
Rds On - Drain-Source Resistance :
4.2 mOhms
Technology :
SI
Tradename :
TrenchFET
Transistor Polarity :
N-Channel
Vds - Drain-Source Breakdown Voltage :
60 V
Vgs - Gate-Source Voltage :
- 20 V, + 20 V
Vgs th - Gate-Source Threshold Voltage :
1.4 V

Beschreibung

MOSFET 60V Vds 20V Vgs SO-8

Preis & Beschaffung

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