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Produktübersicht
- Artikelnummer
- SQ1922EEH-T1_GE3
- Hersteller
- Vishay / Siliconix
- Produktkategorie
- MOSFET
- Beschreibung
- MOSFET 20V Vds Dual N-Ch AEC-Q101 Qualified
Dokumente & Medien
- Datenblätter
- SQ1922EEH-T1_GE3
Produkteigenschaften
- Channel Mode :
- Enhancement
- Id - Continuous Drain Current :
- 840 mA
- Maximum Operating Temperature :
- + 175 C
- Minimum Operating Temperature :
- - 55 C
- Mounting Style :
- SMD/SMT
- Number of Channels :
- 2 Channel
- Package / Case :
- SC-70-6
- Packaging :
- Cut Tape, MouseReel, Reel
- Pd - Power Dissipation :
- 1.5 W
- Qg - Gate Charge :
- 700 pC
- Qualification :
- AEC-Q101
- Rds On - Drain-Source Resistance :
- 350 mOhms
- Technology :
- SI
- Tradename :
- TrenchFET
- Transistor Polarity :
- N-Channel
- Vds - Drain-Source Breakdown Voltage :
- 20 V
- Vgs - Gate-Source Voltage :
- - 12 V, + 12 V
- Vgs th - Gate-Source Threshold Voltage :
- 1 V
Beschreibung
MOSFET 20V Vds Dual N-Ch AEC-Q101 Qualified
Preis & Beschaffung
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