sales@szcinty.com
Produktübersicht
- Artikelnummer
- TSM60N900CI
- Hersteller
- Taiwan Semiconductor
- Produktkategorie
- MOSFET
- Beschreibung
- MOSFET Power MOSFET, N-CHAN 600V, 4.5A, 900mOhm
Dokumente & Medien
- Datenblätter
- TSM60N900CI
Produkteigenschaften
- Channel Mode :
- Enhancement
- Id - Continuous Drain Current :
- 4.5 A
- Maximum Operating Temperature :
- + 150 C
- Minimum Operating Temperature :
- - 55 C
- Mounting Style :
- Through Hole
- Number of Channels :
- 1 Channel
- Package / Case :
- TO-220-3
- Packaging :
- Tube
- Pd - Power Dissipation :
- 20 W
- Qg - Gate Charge :
- 9.7 nC
- Rds On - Drain-Source Resistance :
- 720 mOhms
- Technology :
- SI
- Transistor Polarity :
- N-Channel
- Vds - Drain-Source Breakdown Voltage :
- 600 V
- Vgs - Gate-Source Voltage :
- - 30 V, + 30 V
- Vgs th - Gate-Source Threshold Voltage :
- 2 V
Beschreibung
MOSFET Power MOSFET, N-CHAN 600V, 4.5A, 900mOhm
Preis & Beschaffung
Zugehöriges Produkt
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