Produktübersicht

Artikelnummer
IPP65R190E6
Hersteller
Infineon Technologies
Produktkategorie
MOSFET
Beschreibung
MOSFET N-Ch 700V 20.2A TO220-3

Dokumente & Medien

Datenblätter
IPP65R190E6

Produkteigenschaften

Channel Mode :
Enhancement
Id - Continuous Drain Current :
20.2 A
Maximum Operating Temperature :
+ 150 C
Minimum Operating Temperature :
- 55 C
Mounting Style :
Through Hole
Number of Channels :
1 Channel
Package / Case :
TO-220-3
Packaging :
Tube
Pd - Power Dissipation :
151 W
Qg - Gate Charge :
73 nC
Rds On - Drain-Source Resistance :
170 mOhms
Technology :
SI
Tradename :
CoolMOS
Transistor Polarity :
N-Channel
Vds - Drain-Source Breakdown Voltage :
650 V
Vgs - Gate-Source Voltage :
- 20 V, + 20 V
Vgs th - Gate-Source Threshold Voltage :
2.5 V

Beschreibung

MOSFET N-Ch 700V 20.2A TO220-3

Preis & Beschaffung

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