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Produktübersicht
- Artikelnummer
- TSM080N03EPQ56 RLG
- Hersteller
- Taiwan Semiconductor
- Produktkategorie
- MOSFET
- Beschreibung
- MOSFET 30V, 55A, Single N-Channel Power MOSFET
Dokumente & Medien
- Datenblätter
- TSM080N03EPQ56 RLG
Produkteigenschaften
- Channel Mode :
- Enhancement
- Id - Continuous Drain Current :
- 55 A
- Maximum Operating Temperature :
- + 150 C
- Minimum Operating Temperature :
- - 55 C
- Mounting Style :
- SMD/SMT
- Number of Channels :
- 1 Channel
- Package / Case :
- PDFN-56-8
- Packaging :
- Cut Tape, Reel
- Pd - Power Dissipation :
- 54 W
- Qg - Gate Charge :
- 7.5 nC
- Rds On - Drain-Source Resistance :
- 6.5 mOhms
- Technology :
- SI
- Transistor Polarity :
- N-Channel
- Vds - Drain-Source Breakdown Voltage :
- 30 V
- Vgs - Gate-Source Voltage :
- - 20 V, + 20 V
- Vgs th - Gate-Source Threshold Voltage :
- 1 V
Beschreibung
MOSFET 30V, 55A, Single N-Channel Power MOSFET
Preis & Beschaffung
Zugehöriges Produkt
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