sales@szcinty.com
Produktübersicht
- Artikelnummer
- SIRA02DP-T1-GE3
- Hersteller
- Vishay Semiconductors
- Produktkategorie
- MOSFET
- Beschreibung
- MOSFET 30V Vds 20V Vgs PowerPAK SO-8
Dokumente & Medien
- Datenblätter
- SIRA02DP-T1-GE3
Produkteigenschaften
- Channel Mode :
- Enhancement
- Id - Continuous Drain Current :
- 50 A
- Maximum Operating Temperature :
- + 150 C
- Minimum Operating Temperature :
- - 55 C
- Mounting Style :
- SMD/SMT
- Number of Channels :
- 1 Channel
- Package / Case :
- PowerPAK-SO-8
- Packaging :
- Cut Tape, MouseReel, Reel
- Pd - Power Dissipation :
- 71.4 W
- Qg - Gate Charge :
- 117 nC
- Rds On - Drain-Source Resistance :
- 1.65 mOhms
- Technology :
- SI
- Tradename :
- TrenchFET, PowerPAK
- Transistor Polarity :
- N-Channel
- Vds - Drain-Source Breakdown Voltage :
- 30 V
- Vgs - Gate-Source Voltage :
- - 16 V, + 20 V
- Vgs th - Gate-Source Threshold Voltage :
- 1.1 V
Beschreibung
MOSFET 30V Vds 20V Vgs PowerPAK SO-8
Preis & Beschaffung
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