Produktübersicht

Artikelnummer
IPB80N04S4-03
Hersteller
Infineon Technologies
Produktkategorie
MOSFET
Beschreibung
MOSFET N-Ch 40V 80A D2PAK-2 OptiMOS-T2

Dokumente & Medien

Datenblätter
IPB80N04S4-03

Produkteigenschaften

Channel Mode :
Enhancement
Id - Continuous Drain Current :
80 A
Maximum Operating Temperature :
+ 175 C
Minimum Operating Temperature :
- 55 C
Mounting Style :
SMD/SMT
Number of Channels :
1 Channel
Package / Case :
TO-263-3
Packaging :
Cut Tape, MouseReel, Reel
Pd - Power Dissipation :
94 W
Qg - Gate Charge :
51 nC
Qualification :
AEC-Q101
Rds On - Drain-Source Resistance :
3.3 mOhms
Technology :
SI
Tradename :
OptiMOS
Transistor Polarity :
N-Channel
Vds - Drain-Source Breakdown Voltage :
40 V
Vgs - Gate-Source Voltage :
- 20 V, + 20 V
Vgs th - Gate-Source Threshold Voltage :
3 V

Beschreibung

MOSFET N-Ch 40V 80A D2PAK-2 OptiMOS-T2

Preis & Beschaffung

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