Produktübersicht

Artikelnummer
IPD90N03S4L03ATMA1
Hersteller
Infineon Technologies
Produktkategorie
MOSFET
Beschreibung
MOSFET N-Ch 30V 90A DPAK-2 OptiMOS-T2

Dokumente & Medien

Datenblätter
IPD90N03S4L03ATMA1

Produkteigenschaften

Channel Mode :
Enhancement
Id - Continuous Drain Current :
90 A
Maximum Operating Temperature :
+ 175 C
Minimum Operating Temperature :
- 55 C
Mounting Style :
SMD/SMT
Number of Channels :
1 Channel
Package / Case :
TO-252-3
Packaging :
Cut Tape, MouseReel, Reel
Pd - Power Dissipation :
94 W
Qg - Gate Charge :
75 nC
Qualification :
AEC-Q101
Rds On - Drain-Source Resistance :
2.5 mOhms
Technology :
SI
Transistor Polarity :
N-Channel
Vds - Drain-Source Breakdown Voltage :
30 V
Vgs - Gate-Source Voltage :
- 16 V, + 16 V
Vgs th - Gate-Source Threshold Voltage :
1 V

Beschreibung

MOSFET N-Ch 30V 90A DPAK-2 OptiMOS-T2

Preis & Beschaffung

Zugehöriges Produkt

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