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Produktübersicht
- Artikelnummer
- CSD83325LT
- Hersteller
- Texas Instruments
- Produktkategorie
- MOSFET
- Beschreibung
- MOSFET 12-V, N channel NexFET power MOSFET, dual LGA, 5.9 mOhm, gate ESD protection 6-PICOSTAR -55 to 150
Dokumente & Medien
- Datenblätter
- CSD83325LT
Produkteigenschaften
- Channel Mode :
- Enhancement
- Id - Continuous Drain Current :
- 8 A
- Maximum Operating Temperature :
- + 150 C
- Minimum Operating Temperature :
- - 55 C
- Mounting Style :
- SMD/SMT
- Number of Channels :
- 2 Channel
- Package / Case :
- BGA-6
- Packaging :
- Cut Tape, MouseReel, Reel
- Pd - Power Dissipation :
- 2.3 W
- Qg - Gate Charge :
- 8.4 nC
- Rds On - Drain-Source Resistance :
- 5.9 mOhms
- Technology :
- SI
- Tradename :
- NexFET
- Transistor Polarity :
- N-Channel
- Vds - Drain-Source Breakdown Voltage :
- 12 V
- Vgs - Gate-Source Voltage :
- - 10 V, + 10 V
- Vgs th - Gate-Source Threshold Voltage :
- 950 mV
Beschreibung
MOSFET 12-V, N channel NexFET power MOSFET, dual LGA, 5.9 mOhm, gate ESD protection 6-PICOSTAR -55 to 150
Preis & Beschaffung
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