Datenblätter

SIS990DN-T1-GE3

Channel Mode :

Enhancement

Id - Continuous Drain Current :

12.1 A

Maximum Operating Temperature :

+ 150 C

Minimum Operating Temperature :

- 55 C

Mounting Style :

SMD/SMT

Number of Channels :

2 Channel

Package / Case :

PowerPAK-1212-8

Packaging :

Cut Tape, MouseReel, Reel

Pd - Power Dissipation :

25 W

Qg - Gate Charge :

8 nC

Rds On - Drain-Source Resistance :

85 mOhms

Technology :

SI

Tradename :

TrenchFET, PowerPAK

Transistor Polarity :

N-Channel

Vds - Drain-Source Breakdown Voltage :

100 V

Vgs - Gate-Source Voltage :

- 20 V, + 20 V

Vgs th - Gate-Source Threshold Voltage :

2.5 V