Datenblätter

IXTK600N04T2

Channel Mode :

Enhancement

Id - Continuous Drain Current :

600 A

Maximum Operating Temperature :

+ 175 C

Minimum Operating Temperature :

- 55 C

Mounting Style :

Through Hole

Number of Channels :

1 Channel

Package / Case :

TO-264-3

Packaging :

Tube

Pd - Power Dissipation :

1.25 kW

Qg - Gate Charge :

590 nC

Rds On - Drain-Source Resistance :

1.5 MOhms

Technology :

SI

Tradename :

HiPerFET

Transistor Polarity :

N-Channel

Vds - Drain-Source Breakdown Voltage :

40 V

Vgs - Gate-Source Voltage :

- 20 V, + 20 V

Vgs th - Gate-Source Threshold Voltage :

1.5 V