Produktübersicht

Artikelnummer
ISC0802NLSATMA1
Hersteller
Infineon Technologies
Produktkategorie
MOSFET
Beschreibung
MOSFET TRENCH >=100V

Dokumente & Medien

Datenblätter
ISC0802NLSATMA1

Produkteigenschaften

Channel Mode :
Enhancement
Id - Continuous Drain Current :
150 A
Maximum Operating Temperature :
+ 150 C
Minimum Operating Temperature :
- 55 C
Mounting Style :
SMD/SMT
Number of Channels :
1 Channel
Package / Case :
TDSON-FL-8
Packaging :
Cut Tape, Reel
Pd - Power Dissipation :
125 W
Qg - Gate Charge :
29 nC
Rds On - Drain-Source Resistance :
3.6 mOhms
Technology :
SI
Transistor Polarity :
N-Channel
Vds - Drain-Source Breakdown Voltage :
100 V
Vgs - Gate-Source Voltage :
- 20 V, + 20 V
Vgs th - Gate-Source Threshold Voltage :
2.3 V

Beschreibung

MOSFET TRENCH >=100V

Preis & Beschaffung

Zugehöriges Produkt

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