sales@szcinty.com
Produktübersicht
- Artikelnummer
- IPD30N12S3L31ATMA1
- Hersteller
- Infineon Technologies
- Produktkategorie
- MOSFET
- Beschreibung
- MOSFET N-CHANNEL 100+
Dokumente & Medien
- Datenblätter
- IPD30N12S3L31ATMA1
Produkteigenschaften
- Channel Mode :
- Enhancement
- Id - Continuous Drain Current :
- 30 A
- Maximum Operating Temperature :
- + 175 C
- Minimum Operating Temperature :
- - 55 C
- Mounting Style :
- SMD/SMT
- Number of Channels :
- 1 Channel
- Package / Case :
- TO-252-3
- Packaging :
- Cut Tape, Reel
- Pd - Power Dissipation :
- 57 W
- Qg - Gate Charge :
- 31 nC
- Qualification :
- AEC-Q101
- Rds On - Drain-Source Resistance :
- 31 mOhms
- Technology :
- SI
- Transistor Polarity :
- N-Channel
- Vds - Drain-Source Breakdown Voltage :
- 120 V
- Vgs - Gate-Source Voltage :
- - 20 V, + 20 V
- Vgs th - Gate-Source Threshold Voltage :
- 1.7 V
Beschreibung
MOSFET N-CHANNEL 100+
Preis & Beschaffung
Zugehöriges Produkt
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