sales@szcinty.com
Produktübersicht
- Artikelnummer
- SQJ262EP-T1_GE3
- Hersteller
- Vishay / Siliconix
- Produktkategorie
- MOSFET
- Beschreibung
- MOSFET Dual 60V Vds Asymtrc AEC-Q101 Qualified
Dokumente & Medien
- Datenblätter
- SQJ262EP-T1_GE3
Produkteigenschaften
- Channel Mode :
- Enhancement
- Id - Continuous Drain Current :
- 15 A, 40 A
- Maximum Operating Temperature :
- + 175 C
- Minimum Operating Temperature :
- - 55 C
- Mounting Style :
- SMD/SMT
- Number of Channels :
- 2 Channel
- Package / Case :
- PowerPAK-SO-8-4
- Packaging :
- Cut Tape, MouseReel, Reel
- Pd - Power Dissipation :
- 27 W, 48 W
- Qg - Gate Charge :
- 6.5 nC, 14.5 nC
- Qualification :
- AEC-Q101
- Rds On - Drain-Source Resistance :
- 29.5 mOhms, 12.6 mOhms
- Technology :
- SI
- Tradename :
- TrenchFET
- Transistor Polarity :
- N-Channel
- Vds - Drain-Source Breakdown Voltage :
- 60 V
- Vgs - Gate-Source Voltage :
- - 20 V, + 20 V
- Vgs th - Gate-Source Threshold Voltage :
- 2.5 V
Beschreibung
MOSFET Dual 60V Vds Asymtrc AEC-Q101 Qualified
Preis & Beschaffung
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