Produktübersicht

Artikelnummer
TK560P65Y,RQ
Hersteller
Toshiba
Produktkategorie
MOSFET
Beschreibung
MOSFET N-Ch DTMOSV 650V 60W 380pF 7.0A

Dokumente & Medien

Datenblätter
TK560P65Y,RQ

Produkteigenschaften

Channel Mode :
Enhancement
Id - Continuous Drain Current :
7 A
Maximum Operating Temperature :
+ 150 C
Minimum Operating Temperature :
- 55 C
Mounting Style :
SMD/SMT
Number of Channels :
1 Channel
Package / Case :
DPAK-3
Packaging :
Cut Tape, Reel
Pd - Power Dissipation :
60 W
Qg - Gate Charge :
14.5 nC
Rds On - Drain-Source Resistance :
560 mOhms
Technology :
SI
Tradename :
DTMOSV
Transistor Polarity :
N-Channel
Vds - Drain-Source Breakdown Voltage :
650 V
Vgs - Gate-Source Voltage :
- 30 V, + 30 V
Vgs th - Gate-Source Threshold Voltage :
4 V

Beschreibung

MOSFET N-Ch DTMOSV 650V 60W 380pF 7.0A

Preis & Beschaffung

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