Datenblätter

SIZF914DT-T1-GE3

Channel Mode :

Enhancement

Id - Continuous Drain Current :

40 A, 60 A

Maximum Operating Temperature :

+ 150 C

Minimum Operating Temperature :

- 50 C

Mounting Style :

SMD/SMT

Number of Channels :

2 Channel

Package / Case :

PowerPAIR-6x5-8

Packaging :

Cut Tape, MouseReel, Reel

Pd - Power Dissipation :

26.6 W, 60 W

Qg - Gate Charge :

14 nC, 65 nC

Rds On - Drain-Source Resistance :

6.2 mOhms, 1.5 mOhms

Technology :

SI

Tradename :

TrenchFET, SkyFET, PowerPAIR

Transistor Polarity :

N-Channel, NPN

Vds - Drain-Source Breakdown Voltage :

25 V

Vgs - Gate-Source Voltage :

- 12 V, + 16 V

Vgs th - Gate-Source Threshold Voltage :

1.1 V