Produktübersicht
- Artikelnummer
- SIHS36N50D-GE3
- Hersteller
- Vishay / Siliconix
- Produktkategorie
- MOSFET
- Beschreibung
- MOSFET 500V N-CHANNEL
Dokumente & Medien
- Datenblätter
- SIHS36N50D-GE3
Produkteigenschaften
- Channel Mode :
- Enhancement
- Id - Continuous Drain Current :
- 36 A
- Maximum Operating Temperature :
- + 150 C
- Minimum Operating Temperature :
- - 55 C
- Mounting Style :
- Through Hole
- Number of Channels :
- 1 Channel
- Package / Case :
- TO-247-Super-3
- Packaging :
- Tube
- Pd - Power Dissipation :
- 446 W
- Qg - Gate Charge :
- 83 nC
- Rds On - Drain-Source Resistance :
- 130 mOhms
- Technology :
- SI
- Transistor Polarity :
- N-Channel
- Vds - Drain-Source Breakdown Voltage :
- 500 V
- Vgs - Gate-Source Voltage :
- - 30 V, + 30 V
- Vgs th - Gate-Source Threshold Voltage :
- 5 V
Beschreibung
MOSFET 500V N-CHANNEL
Preis & Beschaffung
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