sales@szcinty.com
Produktübersicht
- Artikelnummer
- RGWX5TS65DHRC11
- Hersteller
- ROHM Semiconductor
- Produktkategorie
- IGBT-Transistoren
- Beschreibung
- IGBT Transistors
Dokumente & Medien
- Datenblätter
- RGWX5TS65DHRC11
Produkteigenschaften
- Collector- Emitter Voltage VCEO Max :
- 650 V
- Collector-Emitter Saturation Voltage :
- 1.9 V
- Configuration :
- Single
- Continuous Collector Current at 25 C :
- 132 A
- Maximum Gate Emitter Voltage :
- 30 V
- Maximum Operating Temperature :
- + 175 C
- Minimum Operating Temperature :
- - 40 C
- Mounting Style :
- Through Hole
- Package / Case :
- TO-247N-3
- Packaging :
- Tube
- Pd - Power Dissipation :
- 348 W
- Technology :
- SI
Beschreibung
IGBT Transistors
Preis & Beschaffung
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