Produktübersicht

Artikelnummer
STGWA75M65DF2
Hersteller
STMicroelectronics
Produktkategorie
IGBT-Transistoren
Beschreibung
IGBT Transistors PTD IGBT & IPM

Dokumente & Medien

Datenblätter
STGWA75M65DF2

Produkteigenschaften

Collector- Emitter Voltage VCEO Max :
650 V
Collector-Emitter Saturation Voltage :
1.65 V
Configuration :
Single
Continuous Collector Current at 25 C :
120 A
Maximum Gate Emitter Voltage :
20 V
Maximum Operating Temperature :
+ 175 C
Minimum Operating Temperature :
- 55 C
Mounting Style :
Through Hole
Package / Case :
TO-247-3
Packaging :
Tube
Pd - Power Dissipation :
488 W
Series :
STGWA75M65DF2
Technology :
SI

Beschreibung

IGBT Transistors PTD IGBT & IPM

Preis & Beschaffung

Zugehöriges Produkt

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