sales@szcinty.com
Produktübersicht
- Artikelnummer
- STGWA40H65DFB
- Hersteller
- STMicroelectronics
- Produktkategorie
- IGBT-Transistoren
- Beschreibung
- IGBT Transistors PTD IGBT & IPM
Dokumente & Medien
- Datenblätter
- STGWA40H65DFB
Produkteigenschaften
- Collector- Emitter Voltage VCEO Max :
- 650 V
- Collector-Emitter Saturation Voltage :
- 1.6 V
- Configuration :
- Single
- Continuous Collector Current at 25 C :
- 80 A
- Maximum Gate Emitter Voltage :
- 20 V
- Maximum Operating Temperature :
- + 175 C
- Minimum Operating Temperature :
- - 55 C
- Mounting Style :
- Through Hole
- Package / Case :
- TO-247-3
- Packaging :
- Tube
- Pd - Power Dissipation :
- 283 W
- Series :
- STGWA40H65DFB
- Technology :
- SI
Beschreibung
IGBT Transistors PTD IGBT & IPM
Preis & Beschaffung
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