sales@szcinty.com
Produktübersicht
- Artikelnummer
- IXXH60N65B4
- Hersteller
- IXYS
- Produktkategorie
- IGBT-Transistoren
- Beschreibung
- IGBT Transistors 650V/116A TRENCH IGBT GENX4 XPT
Dokumente & Medien
- Datenblätter
- IXXH60N65B4
Produkteigenschaften
- Collector- Emitter Voltage VCEO Max :
- 650 V
- Collector-Emitter Saturation Voltage :
- 1.7 V
- Configuration :
- Single
- Continuous Collector Current at 25 C :
- 116 A
- Maximum Gate Emitter Voltage :
- 20 V
- Maximum Operating Temperature :
- + 175 C
- Minimum Operating Temperature :
- - 55 C
- Mounting Style :
- Through Hole
- Package / Case :
- TO-247AD-3
- Packaging :
- Tube
- Pd - Power Dissipation :
- 455 W
- Series :
- Trench - 650V - 1200V GenX16
- Technology :
- SI
Beschreibung
IGBT Transistors 650V/116A TRENCH IGBT GENX4 XPT
Preis & Beschaffung
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