Produktübersicht

Artikelnummer
DGTD65T60S2PT
Hersteller
Diodes Incorporated
Produktkategorie
IGBT-Transistoren
Beschreibung
IGBT Transistors IGBT 600V-X TO247 TUBE 0.45K

Dokumente & Medien

Datenblätter
DGTD65T60S2PT

Produkteigenschaften

Collector- Emitter Voltage VCEO Max :
650 V
Collector-Emitter Saturation Voltage :
1.85 V
Configuration :
Single
Continuous Collector Current at 25 C :
100 A
Maximum Gate Emitter Voltage :
20 V
Maximum Operating Temperature :
+ 175 C
Minimum Operating Temperature :
- 40 C
Mounting Style :
Through Hole
Package / Case :
TO-247-3
Packaging :
Tube
Pd - Power Dissipation :
428 W
Technology :
SI

Beschreibung

IGBT Transistors IGBT 600V-X TO247 TUBE 0.45K

Preis & Beschaffung

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