Produktübersicht

Artikelnummer
NGB8207ABNT4G
Hersteller
Littelfuse
Produktkategorie
IGBT-Transistoren
Beschreibung
IGBT Transistors 365V 20A IGBT IGNITION

Dokumente & Medien

Datenblätter
NGB8207ABNT4G

Produkteigenschaften

Collector- Emitter Voltage VCEO Max :
365 V
Continuous Collector Current at 25 C :
20 A
Maximum Gate Emitter Voltage :
15 V
Maximum Operating Temperature :
+ 175 C
Minimum Operating Temperature :
- 55 C
Mounting Style :
SMD/SMT
Package / Case :
TO-263-3
Packaging :
Cut Tape, MouseReel, Reel
Pd - Power Dissipation :
165 W
Series :
NGB8207AB
Technology :
SI

Beschreibung

IGBT Transistors 365V 20A IGBT IGNITION

Preis & Beschaffung

Zugehöriges Produkt

  • Xilinx
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  • Xilinx
    CPLD - Complex Programmable Logic Devices XC2C256-6TQG144C
  • Xilinx
    CPLD - Complex Programmable Logic Devices 3.3V 36-mc CPLD
  • Xilinx
    CPLD - Complex Programmable Logic Devices XC2C32A-6VQG44C
  • Xilinx
    CPLD - Complex Programmable Logic Devices 3.3V 72-mc CPLD
  • Xilinx
    CPLD - Complex Programmable Logic Devices XC2C64A-7VQG44C
  • Xilinx
    CPLD - Complex Programmable Logic Devices 3.3V 72-mc CPLD
  • Xilinx
    CPLD - Complex Programmable Logic Devices XC2C64A-7VQG44I
  • STMicroelectronics
    Microprocessors - MPU MPU ARM926 Cortex 8-ch DMA 32KB Rom
  • STMicroelectronics
    Embedded - CPLDs (Complex Programmable Logic Devices)

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