Produktübersicht

Artikelnummer
IXXX110N65B4H1
Hersteller
IXYS
Produktkategorie
IGBT-Transistoren
Beschreibung
IGBT Transistors 650V/240A TRENCH IGBT GENX4 XPT

Dokumente & Medien

Datenblätter
IXXX110N65B4H1

Produkteigenschaften

Collector- Emitter Voltage VCEO Max :
650 V
Collector-Emitter Saturation Voltage :
1.75 V
Configuration :
Single
Continuous Collector Current at 25 C :
240 A
Maximum Gate Emitter Voltage :
20 V
Maximum Operating Temperature :
+ 175 C
Minimum Operating Temperature :
- 55 C
Mounting Style :
Through Hole
Package / Case :
PLUS 247-3
Packaging :
Tube
Pd - Power Dissipation :
880 W
Series :
Trench - 650V - 1200V GenX33
Technology :
SI

Beschreibung

IGBT Transistors 650V/240A TRENCH IGBT GENX4 XPT

Preis & Beschaffung

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