sales@szcinty.com
Produktübersicht
- Artikelnummer
- VS-GT400TH60N
- Hersteller
- Vishay Semiconductors
- Produktkategorie
- IGBT-Module
- Beschreibung
- IGBT Modules Output & SW Modules - DIAP IGBT
Dokumente & Medien
- Datenblätter
- VS-GT400TH60N
Produkteigenschaften
- Collector- Emitter Voltage VCEO Max :
- 600 V
- Collector-Emitter Saturation Voltage :
- 1.6 V
- Configuration :
- Half Bridge
- Continuous Collector Current at 25 C :
- 530 A
- Gate-Emitter Leakage Current :
- 400 nA
- Maximum Operating Temperature :
- + 175 C
- Package / Case :
- INT-A-PAK
- Pd - Power Dissipation :
- 1.6 kW
Beschreibung
IGBT Modules Output & SW Modules - DIAP IGBT
Preis & Beschaffung
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