Produktübersicht

Artikelnummer
APTGT75X60T3G
Hersteller
Microsemi / Microchip
Produktkategorie
IGBT-Module
Beschreibung
IGBT Modules DOR CC3078

Dokumente & Medien

Datenblätter
APTGT75X60T3G

Produkteigenschaften

Collector- Emitter Voltage VCEO Max :
600 V
Collector-Emitter Saturation Voltage :
1.5 V
Configuration :
3-Phase
Continuous Collector Current at 25 C :
100 A
Gate-Emitter Leakage Current :
600 nA
Maximum Operating Temperature :
+ 100 C
Minimum Operating Temperature :
- 40 C
Package / Case :
SP3-32
Packaging :
Tube
Pd - Power Dissipation :
250 W
Product :
IGBT Silicon Modules

Beschreibung

IGBT Modules DOR CC3078

Preis & Beschaffung

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